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 Product Brief
PE42612 Flip Chip
SP4T UltraCMOSTM 2.6 V Switch 100 - 3000 MHz
Figure 1. Functional Diagram
Features
* Two pin CMOS logic control inputs * Supports 1.8 V Control Logic * Low TX insertion loss: 0.55 dB at
TX1
RX1
* * * * * *
TX2
RX2
CMOS Control/Driver and ESD
V1
V2
900 MHz, 0.70 dB at 1900 MHz Isolation of 39 dB at 900 MHz, 31 dB at 1900 MHz Low harmonics 2fo = -82 dBc and 3fo = -74 dBc at 35 dBm input power 1500 V HBM ESD tolerance Built in CMOS decoder/driver RX SAW over voltage protection circuit No blocking capacitors required
Figure 2. Die Top View
Product Description
The PE42612 SP4T RF UltraCMOSTM Flip Chip Switch is designed specifically to address the needs of the antenna switch module market for GSM Handsets. On-chip CMOS decode logic is used to facilitate two-pin, low voltage CMOS control inputs. High ESD tolerance of 1500 V at all ports, no blocking capacitor requirements and on-chip SAW filter over-voltage protection devices make this the ultimate in integration and ease of use. The PE42612 is manufactured on Peregrine's UltraCMOSTM process, a patented variation of silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS.
10 TX1
11 N/C
12 ANT
1 RX1
9 GND
2 GND
8 TX2 GND 7 VDD 6 V2 5
3 RX2 V1 4
Document No. 70-0217-01 www.psemi.com Contact sales@psemi.com for full version of datasheet
(c)2006 Peregrine Semiconductor Corp. All rights reserved. Page 1 of 4
PE42612
Product Brief
Table 1. PE42612 Electrical Specifications: Temp = 25C, VDD = 2.6 V
Parameter
Operational Frequency ANT - TX - 850 / 900 MHz ANT - TX - 1800 / 1900 MHz ANT - RX - 850 / 900 MHz ANT - RX - 1800 / 1900 MHz TX - RX - 850 / 900 MHz (TX ON) TX - RX - 1800 / 1900 MHz (TX ON) TX1 - TX2 - 850 / 900 MHz (TX1 ON) TX1 - TX2 - 1800 / 1900 MHz (TX1 ON) 850 / 900 MHz 1800 / 1900 MHz 35 dBm TX Input Power - 850 / 900 MHz 33 dBm TX Input Power - 1800 / 1900 MHz 35 dBm TX Input Power - 850 / 900 MHz 33 dBm TX Input Power - 1800 / 1900 MHz (10-90%) (90-10%) RF 37 29 33 26 18 14
Condition
Min
100
Typ
Max
3000
Unit
MHz dB dB dB dB dB dB dB dB dB dB
Insertion Loss
0.55 0.7 0.85 1.05 39 31 35 28 20 16 -82 -89 -74 -68 2
0.65 0.8 1.0 1.2
Isolation
Return Loss 2nd Harmonic1,2 3rd Harmonic1,2 Switching time Notes:
-78 -82 -69 -65 3
dBc dBc dBc dBc s
1. Measured in Pulsed Wave Mode. 2. Assumes RF input duty cycle of 50% and 4620 s, measured per 3GPP TS 45.005
Table 2. Operating Ranges
Parameter
Temperature range VDD Supply Voltage IDD Power Supply Current (VDD = 2.6 V) TX input power (VSWR 3:1) 824-915 MHz TX input power (VSWR 3:1)
1710-1910 MHz
Table 3. Absolute Maximum Ratings
Symbol VDD VI Parameter/Conditions Power supply voltage Voltage on any DC input Storage temperature range Operating temperature range TX input power (50 )3,4 824-915 MHz TX input power (50 )3,4 1710-1910 MHz RX input power (50 ) TX input power (VSWR = (:1)3,4 824-915 MHz TX input power (VSWR = (:1)3,4 1710-1910 MHz ESD Voltage (HBM, MIL_STD 883 Method 3015.7) VESD ESD Voltage (MM, JEDEC, JESD22-A114-B) Min -0.3 -0.3 -65 -40 Max 4.0 VDD+ 0.3 +150 +85 +38 +36 +23 +35 dBm +33 1500 100 V V dBm Units V V C C -40 2.4 2.6 11 +85 2.95 25 +35 C V A TST TOP
Symbol Min Typ Max Units
TOP VDD IDD
PIN +33 PIN VIH VIL 1.40 0.40 1 +20
dBm
RX input power (VSWR 1:1) Control Voltage High Control Voltage Low Control Line Current
dBm V V A
PIN
PIN (:1)
Note:
3. Assumes RF input duty cycle of 50% and 4620 s. 4. VDD within operating range specified in Table 4.
Absolute Maximum Ratings are those values listed in the above table. Exceeding these values may cause permanent device damage. Functional operation should be restricted to the limits in the DC Electrical Specifications table. Exposure to absolute maximum ratings for extended periods may affect device reliability.
(c)2006 Peregrine Semiconductor Corp. All rights reserved. Page 2 of 4 Document No. 70-0217-01 UltraCMOSTM RFIC Solutions Contact sales@psemi.com for full version of datasheet
PE42612
Product Brief
Figure 3. Pin Configuration (Ball-Side Up)
N/C TX1 10 11 ANT 12 1 RX1
Table 5. Truth Table
Path
ANT - RX1 ANT - RX2 ANT - TX1 ANT - TX2
V2
0 0 1 1
V1
0 1 0 1
GND
9 PE42612 Die
2
GND
Electrostatic Discharge (ESD) Precautions
3 RX2
TX2
8
GND
7
6 VDD
5 V2
4
V1
When handling this UltraCMOSTM device, observe the same precautions that you would use with other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the specified rating.
Table 4. Pin Descriptions
Pin No. 15 2 3
5
Latch-Up Avoidance
Description
Pin Name RX1 GND RX2 V1 V2 VDD GND TX2 GND TX1 N/C ANT RF I/O - RX1 Ground RF I/O - RX2
Unlike conventional CMOS devices, UltraCMOSTM devices are immune to latch-up.
4 5 6 7 85 9 105 11 125 Note:
Switch control input, CMOS logic level Switch control input, CMOS logic level Supply Ground RF I/O - TX2 Ground RF I/O - TX1 No Connect - Pin to be connected to an electrically isolated low capacitance pad RF Common - Antenna Input
5. Blocking capacitors needed only when non-zero DC voltage present.
Table 6. Ordering Information
Order Code PE42612-90 (Unitive) PE42612-91 (FCI) PE42612-00 Die ID C9817_1 C9817_1 C9817_1 Description PE42612-DIE-D PE42612-DIE-D PE42612-DIE-1H Package Film Frame Film Frame Evaluation Kit Shipping Method Wafer (Gross Die / Wafer Quantity) Wafer (Gross Die / Wafer Quantity) 1 / Box
Document No. 70-0217-01 www.psemi.com Contact sales@psemi.com for full version of datasheet
(c)2006 Peregrine Semiconductor Corp. All rights reserved. Page 3 of 4
PE42612
Product Brief
Sales Offices
The Americas Peregrine Semiconductor Corporation
9450 Carroll Park Drive San Diego, CA 92121 Tel: 858-731-9400 Fax: 858-731-9499
Peregrine Semiconductor, Asia Pacific (APAC)
Shanghai, 200040, P.R. China Tel: +86-21-5836-8276 Fax: +86-21-5836-7652
Peregrine Semiconductor, Korea
#B-2607, Kolon Tripolis, 210 Geumgok-dong, Bundang-gu, Seongnam-si Gyeonggi-do, 463-943 South Korea Tel: +82-31-728-3939 Fax: +82-31-728-3940
Europe Peregrine Semiconductor Europe
Batiment Maine 13-15 rue des Quatre Vents F-92380 Garches, France Tel: +33-1-4741-9173 Fax : +33-1-4741-9173
Peregrine Semiconductor K.K., Japan
Teikoku Hotel Tower 10B-6 1-1-1 Uchisaiwai-cho, Chiyoda-ku Tokyo 100-0011 Japan Tel: +81-3-3502-5211 Fax: +81-3-3502-5213
Space and Defense Products
Americas: Tel: 858-731-9453 Europe, Asia Pacific: 180 Rue Jean de Guiramand 13852 Aix-En-Provence Cedex 3, France Tel: +33-4-4239-3361 Fax: +33-4-4239-7227
For a list of representatives in your area, please refer to our Web site at: www.psemi.com
Data Sheet Identification
Advance Information
The product is in a formative or design stage. The data sheet contains design target specifications for product development. Specifications and features may change in any manner without notice. The information in this data sheet is believed to be reliable. However, Peregrine assumes no liability for the use of this information. Use shall be entirely at the user's own risk. No patent rights or licenses to any circuits described in this data sheet are implied or granted to any third party. Peregrine's products are not designed or intended for use in devices or systems intended for surgical implant, or in other applications intended to support or sustain life, or in any application in which the failure of the Peregrine product could create a situation in which personal injury or death might occur. Peregrine assumes no liability for damages, including consequential or incidental damages, arising out of the use of its products in such applications. The Peregrine name, logo, and UTSi are registered trademarks and UltraCMOS and HaRP are trademarks of Peregrine Semiconductor Corp.
Preliminary Specification
The data sheet contains preliminary data. Additional data may be added at a later date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product.
Product Specification
The data sheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended changes by issuing a DCN (Document Change Notice).
(c)2006 Peregrine Semiconductor Corp. All rights reserved. Page 4 of 4
Document No. 70-0217-01 UltraCMOSTM RFIC Solutions Contact sales@psemi.com for full version of datasheet


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